Infineon BSZ123N08NS3GATMA1

B06XFJQ8QH

INFINEON BSZ123N08NS3GATMA1 Single N-Channel 80 V 12.3 mOhm 19 nC OptiMOS Power Mosfet - TSDSON-8 - 5000 item(s)

INFINEON BSZ123N08NS3GATMA1 Single N-Channel 80 V 12.3 mOhm 19 nC OptiMOS Power Mosfet - TSDSON-8 - 5000 item(s)zoom

Attributes

Key Value
Base Product NumberBSZ123
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10A (Ta), 40A (Tc)
Drain to Source Voltage.80 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Input Capacitance (Ciss.1700 pF @ 40 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)2.1W (Ta), 66W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs12.3mOhm @ 20A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 33?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Mouser726-BSZ123N08NS3G1.36135172Infineon1.36 @ 1
thumbzoomNewark60R25421.58123923INFINEON1.58 @ 1
Digi-Key19808201.8155Infineon Technologies1.8 @ 1
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