Base Product Number | IDH06G65 |
Capacitance @ Vr, F | 302pF @ 1V, 1MHz |
Case, Supplier Device Package | PG-TO220-2 |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 16A |
Current - Reverse Leakage @ Vr | 20 ?A @ 420 V |
Description | DIODE SIL CARB 650V 16A TO220-2 |
Detailed Description | Diode 650 V 16A Through Hole PG-TO220-2 |
Digi-Key Part Number | 448-IDH06G65C6XKSA1-ND |
Heatsink thickness | 1.17...1.37mm |
Kind of package, Package | tube |
Leakage current | 46?A |
Load current | 6A |
Manufacturer Product Number | IDH06G65C6XKSA1 |
Manufacturer Standard Lead Time | 39 Weeks |
Manufacturer, Mfr | INFINEON TECHNOLOGIES |
Max. forward impulse current | 30A |
Max. forward voltage | 1.25V |
Max. off-state voltage | 650V |
Mounting | THT |
Mounting Type | Through Hole |
Operating Temperature - Junction | -55?C ~ 175?C |
Package / Case | TO-220-2 |
Power dissipation | 54W |
Product Status | Active |
Reverse Recovery Time (trr) | 0 ns |
Semiconductor structure | single diode |
Series | - |
Speed | No Recovery Time > 500mA (Io) |
Technology | SiC (Silicon Carbide) Schottky, CoolSiC? 5G, |
Type of diode | Schottky rectifying |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 6 A |