brand:
manufacturer:
Preferred Price:
36.83
Price:
36.83
Min Simple Price:
2.0137
Absolute Min Price:
28.59
Min Price:
28.59
qty:
1
simpleSku:
MjEyNg:::IPB019N06L3GATMA1
sku:
MjEyNg::S6:IPB019N06L3GATMA1@y1
condition:
11
seller:
TME
amzMan:
infineon technologies
HazMat:
False
DropShip:
False
Attributes
| Key ^ | Value |
|---|---|
| Base Product Number | IPB019 |
| Case, Supplier Device Package | PG-TO263-3 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 120A (Tc) |
| Drain current | 120A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain-source voltage | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 4.5 V |
| Gate-source voltage, Vgs (Max) | ?20V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 30 V |
| Kind of channel | enhanced |
| Manufacturer, Mfr | INFINEON TECHNOLOGIES |
| Mounting | SMD |
| Mounting Type | Surface Mount |
| On-state resistance | 1.9m? |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
| Polarisation | unipolar |
| Power dissipation | 250W |
| Power Dissipation (Max) | 250W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| Series | OptiMOS? |
| Technology | MOSFET (Metal Oxide), OptiMOS? 3 |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 2.2V @ 196?A |
All Prices
| Img | Seller | Supplier SKU | Requested Price ^ | Calc MOQ Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|---|---|---|---|---|---|---|---|---|---|
 | TME | IPB019N06L3GATMA1 | 2.0137 | 12.88768 | 1 | 10 | INFINEON TECHNOLOGIES | 2.0137 @ Qty: 10+ | ||
| Future Electronics | 3088381 | 2.448 | 993.888 | 1000 | 10 | Infineon | 2.448 @ Qty: 1000+ | |||
| Digi-Key | 3196714 | 3.512 | 22.4768 | 1 | 10 | Infineon Technologies | 3.512 @ Qty: 10+ |
