| Alternate Part No. | 726-IPB023N04NG |
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 7.8 ns |
| Id - Continuous Drain Current | 90 A |
| Manufacturer | Infineon |
| Manufacturer Part No. | IPB023N04N G |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package/Case | D2PAK-2 |
| Packaging | Reel |
| Part # Aliases | IPB023N04NGATMA1 |
| Pd - Power Dissipation | 167 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 2.3 mOhms |
| Rise Time | 6.6 ns |
| Series | IPB023N04 |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 40 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |