| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 5 ns |
| Forward Transconductance - Min | 29 S |
| Height | 2.3 mm |
| Id - Continuous Drain Current | 59 A |
| Length | 6.5 mm |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 94 W |
| Product Category, Product Type | MOSFET |
| Qg - Gate Charge | 35 nC |
| Rds On - Drain-Source Resistance | 10.5 mOhms |
| Rise Time | 8 ns |
| RoHS | Y |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 24 ns |
| Typical Turn-On Delay Time | 14 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 6.22 mm |