- mpnIRF1405SPBF
- brandname: Infineon
- manufacturername: Infineon
INFINEON IRF1405SPBF Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET Power Mosfet - D2PAK - 10 item(s)
- Brand: Infineon
- PartNumber: IRF1405SPBF
- Model: IRF1405SPBF
- PackageQuantity: 1
- Manufacturer: INFINEON
- Label: INFINEON
Attributes
| Key | Value |
|---|
| Brand | Infineon |
| Category | Discrete Semiconductor . |
| Channel Mode | Channel Mode |
| Channel Type | N, Channel Type |
| Configuration | Dual Drain |
| Current - Continuous Dr. | 131A (Tc) |
| Dimensions | 10.67 x 9.65 x 4.83 mm |
| Drain Current | 131 A |
| Drain to Source On Resi. | 5.3 mOhms |
| Drain to Source Voltage | 55 V |
| Drain to Source Voltage. | 55 V |
| Drive Voltage (Max Rds . | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Forward Transconductance | 69 sec |
| Forward Voltage, Diode | 1.3 V |
| Gate Charge (Qg) (Max) . | 260 nC @ 10 V |
| Gate to Source Voltage | ?20 V |
| Height | 4.83mm, 0.19" (4.83mm) |
| Input Capacitance | 5480 pF @ 25 V |
| Input Capacitance (Ciss. | 5.48 pF @ 25 V |
| Length | 0.42 in, 10.67mm |
| Maximum Continuous Drai. | 131 A |
| Maximum Drain Source Re. | Maximum Drain Source Re. |
| Maximum Drain Source Vo. | Maximum Drain Source Vo. |
| Maximum Gate Source Vol. | Maximum Gate Source Vol. |
| Maximum Gate Threshold . | 4V |
| Maximum Operating Tempe. | +175 ?C |
| Maximum Power Dissipati. | 200 W |
| Mfr | Infineon Technologies |
| Minimum Gate Threshold . | Minimum Gate Threshold . |
| Minimum Operating Tempe. | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per . | 1 |
| Number of Pins | 3 |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case | TO-263-3, D?Pak (2 Lead. |
| Package Type | D2PAK (TO-263), D2PAK |
| Part Status | Obsolete |
| Pin Count | Pin Count |
| Polarization | N-Channel |
| Power Dissipation | 200 W |
| Power Dissipation (Max) | 200W (Tc) |
| Product Header | Hexfet? Power MOSFET |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 101A, 10V |
| Series | HEXFET?, HEXFET Series,. |
| Stock | Stock |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Temperature Operating R. | -55 to +175 ?C |
| Total Gate Charge | 170 nC |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Turn Off Delay Time | 130 ns |
| Turn On Delay Time | 13 ns |
| Typical Gate Charge @ V. | Typical Gate Charge @ V. |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4V @ 250?A |
| Voltage, Breakdown, Dra. | 55 V |
| Width | 0 in, 9.65mm |
All Prices
| Img | Seller | Supplier SKU | Min Price | MOQ | In Stock | Lead Time | Brand | Weight | Preferred Tier |
|---|
| Digi-Key | 11528183 | 0.925 | 96 | 10 | | Infineon Technologies | | 0.925 @ 96 |
 | RS Delivers | 628-1744 | 2.148 | 1 | 10 | | Infineon | | 2.148 @ 10 |
| us.rs-online.com | 70017221 | 2.55 | 1 | 10 | | Infineon | | 2.55 @ 10 |