Attributes

Key Value
Channel TypeN
ConfigurationDual Drain
Dimensions10.67 x 9.65 x 4.83 mm
Drain Current131 A
Drain to Source On Resi.5.3 mOhms
Drain to Source Voltage55 V
Forward Transconductance69 sec
Forward Voltage, Diode1.3 V
Gate to Source Voltage?20 V
Height0.19" (4.83mm)
Input Capacitance5480 pF @ 25 V
Length0.42 in
Maximum Operating Tempe.+175 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .1
Number of Pins3
Package TypeD2PAK
PolarizationN-Channel
Power Dissipation200 W
Product HeaderHexfet? Power MOSFET
SeriesHEXFET Series
Temperature Operating R.-55 to +175 ?C
Total Gate Charge170 nC
Turn Off Delay Time130 ns
Turn On Delay Time13 ns
Typical Gate Charge @ V.170 nC @ 10 V
Voltage, Breakdown, Dra.55 V
Width0 in
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