| Channel Type | P |
| Configuration | Quad Drain, Triple Source |
| Dimensions | 5.00 x 4.00 x 1.50 mm |
| Drain Current | +/-16 A |
| Drain to Source On Resistance | 0.01 ? |
| Drain to Source Voltage, Voltage, Breakdown, Drain to Source | -12 V |
| Forward Transconductance | 16 S |
| Forward Voltage, Diode | -1.2 V |
| Gate to Source Voltage | ?12 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 17179 pF @ -10 V |
| Length | 0.196" (5mm) |
| Maximum Operating Temperature | +150 ?C |
| Minimum Operating Temperature | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Package Type | SO-8 |
| Polarization | P-Channel |
| Power Dissipation | 2.5 W |
| Product Header | Hexfet? Power MOSFET |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +150 ?C |
| Total Gate Charge | 212 nC |
| Turn Off Delay Time | 6.5 ?s |
| Turn On Delay Time | 50 ns |
| Typical Gate Charge @ Vgs | 212 nC @ -5 V |
| Width | 0.157" (4mm) |