| Channel Type | N |
| Configuration | Single |
| Dimensions | 10.67 x 9.65 x 4.83 mm |
| Drain Current | 80 A |
| Drain to Source On Resistance | 15 m? |
| Drain to Source Voltage, Voltage, Breakdown, Drain to Source | 100 V |
| Forward Transconductance | 82 V |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ?20 V |
| Height | 0.19" (4.83mm) |
| Input Capacitance | 3830 pF @ 25 V |
| Length | 0.42" (10.67mm) |
| Maximum Operating Temperature | +175 ?C |
| Minimum Operating Temperature | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | D2PAK |
| Polarization | N-Channel |
| Power Dissipation | 260 W |
| Product Header | Hexfet? Power MOSFET |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +175 ?C |
| Total Gate Charge | 81 nC |
| Turn Off Delay Time | 61 ns |
| Turn On Delay Time | 15 ns |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V |
| Width | 0.38" (9.65mm) |