Attributes

Key Value
Channel TypeP
ConfigurationDual Drain
Dimensions10.67 x 9.65 x 4.83 mm
Drain Current-14 A
Drain to Source On Resi.0.2 ?
Drain to Source Voltage-100 V
Forward Transconductance3.2 S
Forward Voltage, Diode-1.6 V
Gate to Source Voltage?20 V
Height0.19" (4.83mm)
Input Capacitance760 pF @ -25 V
Length0.42" (10.67mm)
Maximum Operating Tempe.+175 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeSurface Mount
Number of Elements per .1
Number of Pins3
Package TypeD2PAK
PolarizationP-Channel
Power Dissipation79 W
Product HeaderHexfet? Power MOSFET
SeriesHEXFET Series
Temperature Operating R.-55 to +175 ?C
Total Gate Charge58 nC
Turn Off Delay Time45 ns
Turn On Delay Time15 ns
Typical Gate Charge @ V.Maximum of 58 nC @ -10 V
Voltage, Breakdown, Dra.-100 V
Width0.38" (9.65mm)
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