| Channel Type | N |
| Configuration | Dual Drain |
| Dimensions | 6.73 x 6.22 x 2.39 mm |
| Drain Current | 43 A |
| Drain to Source On Resistance | 15.8 m? |
| Drain to Source Voltage, Voltage, Breakdown, Drain to Source | 60 V |
| Forward Transconductance | 41 S |
| Forward Voltage, Diode | 1.3 V |
| Gate to Source Voltage | ?20 V |
| Height | 0.094" (2.39mm) |
| Input Capacitance | 1150 pF @ 50 V |
| Length | 0.264" (6.73mm) |
| Maximum Operating Temperature | +175 ?C |
| Minimum Operating Temperature | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | DPAK |
| Polarization | N-Channel |
| Power Dissipation | 71 W |
| Product Header | Hexfet? Power MOSFET |
| Series | HEXFET Series |
| Temperature Operating Range | -55 to +175 ?C |
| Total Gate Charge | 22 nC |
| Turn Off Delay Time | 49 ns |
| Turn On Delay Time | 6.3 ns |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Width | 0.245" (6.22mm) |