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Description:
Infineon (IRF) IRF8010SPBF | Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PA
Attributes
| Key ^ | Value |
|---|---|
| Case | D2PAK |
| Drain current | 80A |
| Drain-source voltage | 100V |
| Gate charge | 81nC |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Manufacturer | Infineon (IRF) |
| Mounting | SMD |
| On-state resistance | 15m? |
| Polarisation | unipolar |
| Power dissipation | 260W |
| Technology | HEXFET? |
| Type of transistor | N-MOSFET |