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Description:
Infineon (IRF) IRLR8259PBF | Transistor: N-MOSFET; unipolar; 25V; 57A; 48W; DPA
Attributes
| Key ^ | Value |
|---|---|
| Case | DPAK |
| Drain current | 57A |
| Drain-source voltage | 25V |
| Features of semiconductor devices | logic level |
| Gate charge | 6.8nC |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Manufacturer | Infineon (IRF) |
| Mounting | SMD |
| On-state resistance | 8.7m? |
| Polarisation | unipolar |
| Power dissipation | 48W |
| Technology | HEXFET? |
| Type of transistor | N-MOSFET |