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Infineon Technologies BCR512E6327HTSA1
Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 100 MHz 330 mW Surface Mount PG-SOT23

Attributes

Key ^Value
Base Product NumberBCR512
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 50mA, 5V
Frequency - Transition100 MHz
MfrInfineon Technologies
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Power - Max330 mW
Product StatusLast Time Buy
Resistor - Base (R1), Resistor - Emitter Base (R2)4.7 kOhms
Series-
Supplier Device PackagePG-SOT23
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)50 V