Infineon Technologies BSC12DN20NS3GATMA1

mpnBSC12DN20NS3GATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSC12DN20
Category	Discrete Semiconductor .
Current - Continuous Dr.	11.3A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	8.7 nC @ 10 V
Input Capacitance (Ciss.	680 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerTDFN
Part Status	Active
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	125mOhm @ 5.7A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TDSON-8-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 25?A