Attributes

Key Value
Base Product NumberBSZ100
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta), 20A (Tc)
DescriptionMOSFET N-CH 60V 11A/20A.
Detailed DescriptionN-Channel 60 V 11A (Ta).
Digi-Key Part NumberBSZ100N06LS3GATMA1TR-ND.
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .45 nC @ 10 V
Input Capacitance (Ciss.3500 pF @ 30 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.BSZ100N06LS3GATMA1
Manufacturer Standard L.48 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)2.1W (Ta), 50W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TSDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.2V @ 23?A
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