Infineon Technologies BSZ123N08NS3GATMA1

mpnBSZ123N08NS3GATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSZ123
Category	Discrete Semiconductor .
Current - Continuous Dr.	10A (Ta), 40A (Tc)
Drain to Source Voltage.	80 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	25 nC @ 10 V
Input Capacitance (Ciss.	1700 pF @ 40 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Part Status	Active
Power Dissipation (Max)	2.1W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs	12.3mOhm @ 20A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 33?A