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Infineon Technologies BTS115ANKSA1
Description:
N-Channel 50 V 15.5A (Tc) 50W (Tc) Through Hole TO-220AB

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C15.5A (Tc)
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds735 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)50W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs120mOhm @ 7.8A, 4.5V
SeriesTEMPFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id2.5V @ 1mA