Attributes

Key Value
Base Product NumberIMW120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.7A (Tc)
DescriptionSICFET N-CH 1.2KV 4.7A .
Detailed DescriptionN-Channel 1200 V 4.7A (.
Digi-Key Part NumberIMW120R350M1HXKSA1-ND
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .15V, 18V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5.3 nC @ 18 V
Input Capacitance (Ciss.182 pF @ 800 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IMW120R350M1HXKSA1
Manufacturer Standard L.60 Weeks
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)60W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs455mOhm @ 2A, 18V
SeriesCoolSiC?
Supplier Device PackagePG-TO247-3-41
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+23V, -7V
Vgs(th) (Max) @ Id5.7V @ 1mA
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev