brand:
manufacturer:
Description:
N-Channel 650 V 8A (Tc) 26W (Tc) Through Hole PG-TO220-FP
Attributes
| Key ^ | Value |
|---|---|
| Base Product Number | IPA60R |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 8A (Tc) |
| Description | MOSFET N-CH 650V 8A TO220 |
| Detailed Description | N-Channel 650 V 8A (Tc) 26W (Tc) Through Hole PG-TO220-FP |
| Digi-Key Part Number | IPA60R170CFD7XKSA1-ND |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1199 pF @ 400 V |
| Manufacturer Product Number | IPA60R170CFD7XKSA1 |
| Manufacturer Standard Lead Time | 39 Weeks |
| Manufacturer, Mfr | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 26W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 6A, 10V |
| Series | CoolMOS? CFD7 |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4.5V @ 300?A |