Attributes

Key Value
Base Product NumberIPA65R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.31.2A (Tc)
DescriptionMOSFET N-CH 650V 31.2A .
Detailed DescriptionN-Channel 650 V 31.2A (.
Digi-Key Part NumberIPA65R110CFDXKSA1-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .118 nC @ 10 V
Input Capacitance (Ciss.3240 pF @ 100 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPA65R110CFDXKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)34.7W (Tc)
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs110mOhm @ 12.7A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3-111
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 1.3mA
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