Attributes

Key Value
Base Product NumberIPA65R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7.3A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .23 nC @ 10 V
Input Capacitance (Ciss.440 pF @ 100 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)28W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs600mOhm @ 2.1A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3-111
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 210?A
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