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Infineon Technologies IPB019N06L3GATMA1

Attributes

Key ^Value
Base Product NumberIPB019
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C120A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 30 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Part StatusActive
Power Dissipation (Max)250W (Tc)
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.2V @ 196?A