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Description:
INFINEON TECHNOLOGIES IPB019N06L3GATMA1 | Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-
Attributes
| Key ^ | Value |
|---|---|
| Case | PG-TO263-3 |
| Drain current | 120A |
| Drain-source voltage | 60V |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Manufacturer | INFINEON TECHNOLOGIES |
| Mounting | SMD |
| On-state resistance | 1.9m? |
| Polarisation | unipolar |
| Power dissipation | 250W |
| Technology | OptiMOS? 3 |
| Type of transistor | N-MOSFET |