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Infineon Technologies IPB072N15N3GATMA1
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Description:
N-Channel 150 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Attributes

Key ^Value
Base Product NumberIPB072
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C100A (Tc)
DescriptionMOSFET N-CH 150V 100A TO263-3
Detailed DescriptionN-Channel 150 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Digi-Key Part NumberIPB072N15N3GATMA1TR-ND - Tape & Reel (TR)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5470 pF @ 75 V
Manufacturer Product NumberIPB072N15N3GATMA1
Manufacturer Standard Lead Time40 Weeks
Manufacturer, MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)300W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7.2mOhm @ 100A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 270?A