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Infineon Technologies IPB073N15N5ATMA1
Description:
N-Channel 150 V 114A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C114A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4700 pF @ 75 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)214W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7.3mOhm @ 57A, 10V
SeriesOptiMOS?-5
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.6V @ 160?A