Infineon Technologies IPB47N10SL-26

mpnIPB47N10SL-26
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	47A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	135 nC @ 10 V
Input Capacitance (Ciss.	2500 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Bulk
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	175W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	26mOhm @ 33A, 10V
Series	SIPMOS?
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 2mA