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Infineon Technologies IPB60R250CP
Infineon Technologieszoom
Description:
N-Channel 600 V 12A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C12A (Tc)
DescriptionN-CHANNEL POWER MOSFET
Detailed DescriptionN-Channel 600 V 12A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2
Digi-Key Part Number2156-IPB60R250CP-ND
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 100 V
Manufacturer Product NumberIPB60R250CP
Manufacturer, MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)104W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 520?A