| Base Product Number | IPB80N |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 80A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
| Mfr | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-263-3, D?Pak (2 Leads + Tab), TO-263AB |
| Power Dissipation (Max) | 300W (Tc) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| Series | OptiMOS? |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 2V @ 250?A |