Infineon Technologies IPD12CN10NGATMA1

mpnIPD12CN10NGATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPD12CN10
Category	Discrete Semiconductor .
Current - Continuous Dr.	67A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	65 nC @ 10 V
Input Capacitance (Ciss.	4320 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	125W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	12.4mOhm @ 67A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 83?A