Infineon Technologies IPD320N20N3GBTMA1

mpnIPD320N20N3GBTMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	34A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	29 nC @ 10 V
Input Capacitance (Ciss.	2350 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Obsolete
Power Dissipation (Max)	136W (Tc)
Rds On (Max) @ Id, Vgs	32mOhm @ 34A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 90?A