Infineon Technologies IPD60R1K0CEATMA1

Key	Value
Category	Discrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C	4.3A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status	Obsolete
Power Dissipation (Max)	37W (Tc)
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Series	CoolMOS? CE
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 130?A