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Infineon Technologies IPD80R1K4CEBTMA1

Attributes

Key ^Value
Base Product NumberIPD80R
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C3.9A (Tc)
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 100 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Part StatusDiscontinued at Digi-Key
Power Dissipation (Max)63W (Tc)
Rds On (Max) @ Id, Vgs1.4Ohm @ 2.3A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 240?A