brand:
manufacturer:
Description:
N-Channel 120 V 70A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
Attributes
| Key ^ | Value |
|---|---|
| Base Product Number | IPI70N |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 70A (Tc) |
| Description | MOSFET N-CHANNEL_100+ |
| Detailed Description | N-Channel 120 V 70A (Tc) 125W (Tc) Through Hole PG-TO262-3-1 |
| Digi-Key Part Number | IPI70N12S3L12AKSA1-ND |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5550 pF @ 25 V |
| Manufacturer Product Number | IPI70N12S3L12AKSA1 |
| Manufacturer, Mfr | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 175?C (TJ) |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I?Pak, TO-262AA |
| Power Dissipation (Max) | 125W (Tc) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 70A, 10V |
| Series | Automotive, AEC-Q101, OptiMOS? |
| Supplier Device Package | PG-TO262-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 2.4V @ 83?A |