Attributes

Key Value
Base Product NumberIPI90R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.7A (Tc)
DescriptionMOSFET N-CH 900V 5.7A T.
Detailed DescriptionN-Channel 900 V 5.7A (T.
Digi-Key Part NumberIPI90R1K0C3XKSA1-ND
Drain to Source Voltage.900 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .34 nC @ 10 V
Input Capacitance (Ciss.850 pF @ 100 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPI90R1K0C3XKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)89W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 370?A
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