Infineon Technologies IPI90R1K2C3XKSA2

mpnIPI90R1K2C3XKSA2
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPI90R1
Category	Discrete Semiconductor .
Current - Continuous Dr.	5.1A (Tc)
Drain to Source Voltage.	900 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	28 nC @ 10 V
Input Capacitance (Ciss.	710 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Part Status	Active
Power Dissipation (Max)	83W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.8A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO262-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 310?A