prev
Infineon Technologies IPP08CNE8N G
Infineon Technologieszoom
Description:
N-Channel 85 V 95A (Tc) 167W (Tc) Through Hole PG-TO220-3

Attributes

Key ^Value
Base Product NumberIPP08C
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C95A (Tc)
DescriptionMOSFET N-CH 85V 95A TO220-3
Detailed DescriptionN-Channel 85 V 95A (Tc) 167W (Tc) Through Hole PG-TO220-3
Digi-Key Part NumberIPP08CNE8NG-ND
Drain to Source Voltage (Vdss)85 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6690 pF @ 40 V
Manufacturer Product NumberIPP08CNE8N G
Manufacturer, MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)167W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs6.4mOhm @ 95A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 130?A