Attributes

Key Value
Base Product NumberIPP09N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
DescriptionMOSFET N-CH 25V 50A TO2.
Detailed DescriptionN-Channel 25 V 50A (Tc).
Digi-Key Part NumberIPP09N03LAIN-ND
Drain to Source Voltage.25 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 5 V
Input Capacitance (Ciss.1642 pF @ 15 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP09N03LA
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)63W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs9.2mOhm @ 30A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 20?A
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