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Infineon Technologies IPP11N03LA
Infineon Technologieszoom
Description:
N-Channel 25 V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1

Attributes

Key ^Value
Base Product NumberIP11N
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C30A (Tc)
DescriptionMOSFET N-CH 25V 30A TO220-3
Detailed DescriptionN-Channel 25 V 30A (Tc) 52W (Tc) Through Hole PG-TO220-3-1
Digi-Key Part NumberIPP11N03LA-ND
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1358 pF @ 15 V
Manufacturer Product NumberIPP11N03LA
Manufacturer, MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)52W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs11.5mOhm @ 30A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 20?A