Infineon Technologies IPP65R065C7

mpnIPP65R065C7
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	33A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	64 nC @ 10 V
Input Capacitance (Ciss.	3020 pF @ 400 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-220-3
Power Dissipation (Max)	171W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	65mOhm @ 17.1A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 850?A