Attributes

Key Value
Base Product NumberIPP65R310
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.4A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .41 nC @ 10 V
Input Capacitance (Ciss.1100 pF @ 100 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)104.2W (Tc)
Rds On (Max) @ Id, Vgs310mOhm @ 4.4A, 10V
SeriesCoolMOS? CFD2
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 400?A
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