Attributes

Key Value
Base Product NumberIPP80N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
DescriptionMOSFET N-CH 55V 80A TO2.
Detailed DescriptionN-Channel 55 V 80A (Tc).
Digi-Key Part NumberIPP80N06S205AKSA1-ND
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .170 nC @ 10 V
Input Capacitance (Ciss.5110 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP80N06S205AKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)300W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.1mOhm @ 80A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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