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Infineon Technologies IPP80N06S208AKSA1
Infineon Technologieszoom
Description:
N-Channel 55 V 80A (Tc) 215W (Tc) Through Hole PG-TO220-3-1

Attributes

Key ^Value
Base Product NumberIPP80N
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C80A (Tc)
DescriptionMOSFET N-CH 55V 80A TO220-3
Detailed DescriptionN-Channel 55 V 80A (Tc) 215W (Tc) Through Hole PG-TO220-3-1
Digi-Key Part NumberIPP80N06S208AKSA1-ND
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2860 pF @ 25 V
Manufacturer Product NumberIPP80N06S208AKSA1
Manufacturer, MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)215W (Tc)
Product StatusDiscontinued at Digi-Key
Rds On (Max) @ Id, Vgs8mOhm @ 58A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 150?A