Base Product Number | IPP80N06 |
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25?C | 80A (Tc) |
Drain to Source Voltage (Vdss) | 55 V |
Drive Voltage (Max Rds On, Min Rds On), Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55?C ~ 175?C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Part Status | - / 49.00dB, Not For New Designs |
Power Dissipation (Max) | 215W (Tc) |
Rds On (Max) @ Id, Vgs | 8mOhm @ 58A, 10V |
Series | OptiMOS? |
Supplier Device Package | PG-TO220-3-1 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ?20V |
Vgs(th) (Max) @ Id | 4V @ 150?A |