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Infineon Technologies IPW65R075CFD7AXKSA1
Description:
N-Channel 650 V 32A (Tc) 171W (Tc) Through Hole PG-TO247-3-41

Attributes

Key Value
Base Product NumberIPW65R075
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C32A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3288 pF @ 400 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-40?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)171W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs75mOhm @ 16.4A, 10V
SeriesAutomotive, AEC-Q101, CoolMOS? CFD7A
Supplier Device PackagePG-TO247-3-41
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 820?A