Infineon Technologies IPW65R190E6FKSA1

mpnIPW65R190E6FKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	20.2A (Tc)
Drain to Source Voltage.	650V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	73nC @ 10V
Input Capacitance (Ciss.	1.62pF @ 100V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Part Status	Obsolete
Power Dissipation (Max)	151W (Tc)
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Series	CoolMOS?
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 730?A