Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.86A (Tc)
Drain to Source Voltage.60V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .50nC @ 10V
Input Capacitance (Ciss.2120pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseDirectFET? Isometric MN
Part StatusObsolete
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 17A, 10V
SeriesHEXFET?
Supplier Device PackageDIRECTFET? MN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.9V @ 150?A
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