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Infineon Technologies IRF6898MTR1PBF
Description:
N-Channel 25 V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) Surface Mount DIRECTFET? MX

Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C35A (Ta), 213A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5435 pF @ 13 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseDirectFET? Isometric MX
Power Dissipation (Max)2.1W (Ta), 78W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.1mOhm @ 35A, 10V
SeriesHEXFET?
Supplier Device PackageDIRECTFET? MX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.1V @ 100?A