Key | Value |
---|---|
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25?C | 35A (Ta), 213A (Tc) |
Drain to Source Voltage (Vdss) | 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | Schottky Diode (Body) |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 5435 pF @ 13 V |
Mfr | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -40?C ~ 150?C (TJ) |
Package | Tape & Reel (TR) |
Package / Case | DirectFET? Isometric MX |
Power Dissipation (Max) | 2.1W (Ta), 78W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 1.1mOhm @ 35A, 10V |
Series | HEXFET? |
Supplier Device Package | DIRECTFET? MX |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ?16V |
Vgs(th) (Max) @ Id | 2.1V @ 100?A |