prev
Infineon Technologies IRF7210PBF

Attributes

Key ^Value
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C16A (Ta)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs212 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds17179 pF @ 10 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs7mOhm @ 16A, 4.5V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id600mV @ 500?A