Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.7A (Ta)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .59 nC @ 10 V
Input Capacitance (Ciss.1820 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.5W (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs79mOhm @ 2.2A, 10V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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